112年下學期 離子與探針分析技術

星期二 下午02:20-05:30 綜合教學館505室

Office E-mail
Instructor 薛景中 中研院應科中心4B11 shyue at gate.sinica.edu.tw
Textbook T.L. Alford, L.C. Feldman and J.W. Mayer, Fundamentals of Nanoscale Film Analysis, 2007, Springer. DOI: 10.1007/978-0-387-29261-8
References
  • G. Friedbacher and H. Bubert, Surface and Thin Film Analysis: A Compendium of Principles, Instrumentation, and Applications, Second, Completely Revised and Enlarged Edition, 2011, Wiley-VCH. DOI: 10.1002/9783527636921
  • J.I. Goldstein, D.E. Newbury, P. Echlin, D.C. Joy, C.E. Lyman, E. Lifshin, L. Sawyer and J.R. Michael, Scanning Electron Microscopy and X-ray Microanalysis, 4th ed., 2018, Springer. DOI: 10.1007/978-1-4939-6676-9
  • J.C. Vickerman and I.S. Gillmore, Surface Analysis – The Principal Techniques, 2nd ed., 2009, John Wiley & Sons. DOI: 10.1002/9780470721582
  • The Surface Science Society of Japan, Compendium of Surface and Interface Analysis, 2018, Springer. DOI: 10.1007/978-981-10-6156-1
  • J.C. Rivière and S. Myhra, Handbook of Surface and Interface Analysis: Methods for Problem-Solving, 2nd ed., 2009, CRC Press. ISBN: 978-0-8493-7558-3
  • E. Meyer, H.J. Hug, R. Bennewitz, Scanning Probe Microscopy – The Lab on a Tip, 2004, Springer. DOI: 10.1007/978-3-662-09801-1
  • F. Ernst and M. Rühle, High-Resolution Imaging and Spectrometry of Materials, 2003, Springer. DOI: 10.1007/978-3-662-07766-5
  • J. O’Connor, B.A. Sexton, R.St.C. Smart, Surface Analysis Methods in Materials Science, 2003, Springer. DOI: 10.1007/978-3-662-05227-3
  • D.P. Woodruff, T.A. Delchar, Modern Techniques of Surface Science, 2nd ed., 1994, Cambridge. DOI: 10.1017/CBO9780511623172
  • Website http://www.shyue.idv.tw/ion_probe.php
    https://ip-shyue.rcas.sinica.edu.tw/
    http://ip.shyue.idv.tw/
    Workload Homework, 2 in total 20% each 40%
    Mid-Term Exam 30% 30%
    Final Exam 30% 30%
    Total* 100%
    * If the final class average falls below 70%, a curved scale will be used, with the class average set at or near 78%.

    Homework Policies:

    Homework will be due in class at the second class meeting after it is assigned. Late homework will be subject to a penalty of 10% per day unless an extension has been arranged with the instructor prior to the due date. No late homework will be accepted after a solution set has been made available.
    Homework must be hand-written, hand-drawing and legible, with questions answered in numerical order, and stapled if more than one page long. Please: no spiral-bound paper, or pages connected by folding the corners. Students may consult with one another on the homework, but what is handed in must be each student's original, individual work. Homework assignments (or portions thereof) from different students that appear to have been copied or that otherwise appear to be identical may be returned to all the submitters with zero credit.
    The purpose of the homework is to illustrate, apply, and reinforce key topics, not to serve as dry runs for exams.

    Exam Policies:

    Students may bring pencils or pens, erasers, calculators and straight edges to the tests. The mid-term and final exam will be open-book and open-notes. Computer/Pad is also allowed. However, internet and communication softwares/devices in any form are not allowed. During the 3 h exam time, students are not allowed to discuss/consult with anyone and what is handed in must be each student's original, individual and hand-written (hand-drawing) work. If there is any hint that the content is copied, zero credit will be given.
    Mid-term exam will cover the lectures and reading assignments from the preceding parts of the course. The final exam will cover material from throughout the course. Some of the test questions will be similar to the homework problems in style (i.e., short-answer; calculations; explanations of concepts), but some questions will require the student to apply previous material to new situations.
    Unless for definitions, memorizing (complicate) equations is not required because one can always look it up. However, understanding the correlation between factors and the physics behind is crucial.

    Syllabus

    Lecture topics, readings, and dates of homework assignments are subject to change and slides may be updated as we go along. Tests will cover the lecture content and the reading assignments.
    Week Date Lecture Topic Slide Recording
    Supplementary Introduction and Overview: Surface Analysis; Useful References and Tools; Common Mechanisms and Examples of Analytical Techniques [PDF] [MP4]
    2024/01/16
    01 02 03 04 05
    2024/01/16
    Vacuum System [PDF] [MP4]
    2024/03/09
    01 02 03 04
    2024/03/09
    Sample Preparation [PDF] [MP4]
    2024/01/16
    01
    2024/01/16
    Utilities and Environmental Requirements for Instruments [PDF] [MP4]
    2024/01/16
    01 02 03
    2024/01/16
    1 2/20 Rutherford Backscattering Spectrometry (RBS); Ion Scattering Spectrometry (ISS);
    Supplementary: Ion Neutralization Spectroscopy
    [PDF] [MP4]
    2024/01/16
    00
    01 02 03 04 05 06 07 08 09
    2024/01/16
    2 2/27* Nuclear Reaction Analysis (NRA, a.k.a. Particle-Induced Gamma-ray Emission, PIGE);
    Supplementary: Particle-Induced X-ray Emission (PIXE)
    3 3/5 Focused Ion Beam (FIB) [PDF] [MP4]
    2024/02/26
    01 02 03 04 05 06
    2024/02/26
    4 3/12* Field Emission Microscopy (FEM)/Field Ion Microscopy (FIM);
    Supplementary: TEM sample preparation; Atom Probe
    5 3/19 Supplementary: General Mass Spectrometry; History of Secondary Ion Mass Spectroscopy (SIMS);
    Ion-Solid Interactions
    [PDF] [MP4]
    2024/03/09
    01 02 03 04 05 06 07 08 09 10 11 12 13 14 15
    2024/03/09
    6 3/26* Ion Sources and Distribution of Secondary Ions;
    Supplementary: Mass Spectrometers (Wien, Magnetic Sector, Quadrupole, Fourier Transform)
    7 4/2 Mass Spectrometers (Time of Flight); (Cluster) Ion-Solid Interactions;
    Supplementary: Charge Neutralization
    8 4/9* Mass Spectrum; Ionization of Secondary Ions;
    Tandem Mass Spectroscopy (MS/MS); Gental SIMS (G-SIMS)
    Homework #1 assigned
    9 4/16 Mid-Term Exam; Homework #1 due
    10 4/23 Scanning Ion Microscopy (SIM);
    Supplementary: Topographical Effect
    [PDF] [MP4]
    2024/04/19
    01 02 03 04 05 06 07 08 09 10 11 12 13
    2024/04/19
    11 4/30* Sputter Depth Profile;
    Supplementary: Co-Sputter
    12 5/7 Cluster Ion Sputtering; 3D Imaging;
    Supplementary: Secondary Neutral Mass Spectroscopy (SNMS)
    Supplementary Other Surface Mass Spectroscopies: Glow-Discharge (GD); (Matrix-Assisted) Laser Desorption and Ionization ((MA)LDI); Laser Ablation (LA); Stimulated Desorption [PDF] [MP4]
    2023/02/04
    01 02 03 04 05
    2023/02/04
    13 5/14* Scanning Probe Microscopy (SPM): Scanning Tunneling Microscopy/Spectroscopy (STM/STS) [PDF] [MP4]
    2024/05/01
    01 02 03 04 05 06 07 08 09 10
    2024/05/01
    14 5/21 SPM: Atomic Force Microscopy (AFM); Electric Force Microscopy (EFM); Kelvin-Probe Force Microscopy (KPFM); Magnetic Force Microscopy (MFM)
    15 5/28* Supplementary: SPM related techniques [Scanning Near-Field Optical Microscopy (SNOM), Scanning ElectroChemical Microscopy (SECM), Scanning Thermal Microscopy (SThM), Depth Profile, Lithography];
    Instrumentation
    Homework #2 assigned
    16 6/4 Final Exam; Homework #2 due
    *Physical discussion session in assigned classroom.

    Rubric

     

     

    Excellent

    Satisfactory

    Needs work

    Surface analysis and surface science

    Sensitivity as a function of spatial resolution

    • Sensitivity of different techniques
    • Strength of different techniques
    • Physical limitation
    • Number of atoms in solid

    None of the above

    Adsorption of molecules on surfaces

    • Collision rate
    • Thermal desorption techniques
    • Mean free path

    None of the above

    Vacuum system

    • Selection of vacuum components
    • Category of vacuum pumps
    • Vacuum gauges

    None of the above

    General considerations

    • Environment and utilities
    • Sample preparation

    None of the above

    Ion Scattering Spectroscopy

    Rutherford Backscattering Spectrometry (RBS)

    • Kinematic factor
    • Central force scattering
    • Depth profiling
    • Quantitative analysis
    • Structural effect on channeling
    • Instrumentation
    • Scattering cross-section
    • Energy loss in solid
    • Channeling

    None of the above

    Low Energy Ion Scattering (LEIS)

    • Two-body scattering
    • Elastic recoil detection analysis

    None of the above

    Nuclear Reaction Analysis (NRA)

    • Depth profiling via resonance
    • Nomenclature

    None of the above

    Ion beam techniques

    Focused Ion Beam (FIB)

    • Field evaporation
    • Parameter for LMIS
    • Ion-neutralization spectroscopy (INS)
    • Focus of ion beam
    • Liquid metal ion source (LMIS)
    • Imaging, deposition, etching operation

    None of the above

    Field Emission Microscopy (FEM)
    Field Ion Microscopy (FIM)

    • Field emission
    • Field ionization
    • Application of Helium Ion Microscope (HIM)

    None of the above

    Atom Probe

    • Local Electrode Atom Probe (LEAP)
    • Sample preparation
    • Field evaporation

    None of the above

    Sputtering

    • Preferential sputtering
    • Artifacts in sputter depth-profile
    • Parameters that affect sputtering yield
    • Cluster-ion sputtering

    None of the above

    Secondary Ion Mass Spectroscopy (SIMS) and Secondary Neutral Mass Spectroscopy (SNMS)

    • Mass resolution
    • Effect of different primary beam
    • Quantification and matrix effect
    • Scanning Ion Microscope (SIM)
    • Static and dynamic mode
    • Instrumentation
    • Gating
    • Qualitative analysis
    • Isotope operation
    • Depth profile
    • Post-ionization

    None of the above

    Scanning Probe Microscopy (SPM)

    Scanning Tunneling Microscopy (STM)

    • Constant-current mode
    • Constant-height mode
    • Tunneling
    • Instrumentation
    • Imaging of electron density

    None of the above

    Scanning Tunneling Spectroscopy (STS)

    • I(V) mode
    • I(z) mode
    • Polarity at tip

    None of the above

    Atomic Force Microscopy (AFM)

    • Static vs. dynamic
    • Contact vs. non-contact
    • Force curve
    • Tapping operation
    • Lift operation
    • Instrumentation
    • Constant height vs constant force
    • Change in phase and amplitude
    • Force Modulation Microscopy (FMM)

    None of the above

    Various modes of AFM

    • Piezoresponse Force Microscopy (PFM)
    • Scanning Capacitance Microscopy (SCM)
    • Scanning Electrical Potential Microscopy (SEPM)
    •  
    • Electric Force Microscopy (EFM)
    • Magnetic Force Microscopy (MFM)
    • Scanning Near-Field Optical Microscopy (SNOM)
    • Lithography

    None of the above

    Instrumentation and operation considerations

    • Feedback control
    • Effect of probe
    • Artifact of piezo scanner

    None of the above

    Last update: 2024/02/16